Differences What are the advantages of each

Sibling view of Samsung 840 EVO

Reasons to consider the
Samsung 840 EVO

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Higher capacity 1,000 GB vs 800 GB 25% higher capacity
Much faster random write 90,000 IOPS vs 11,500 IOPS More than 7.8x faster random write
Lighter 53 g vs 72 g More than 25% lighter
Faster random read 98,000 IOPS vs 75,000 IOPS More than 30% faster random read
Faster sequential write 520 MB/s vs 450 MB/s More than 15% faster sequential write
Front view of Intel DC S3500

Reasons to consider the
Intel DC S3500

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Higher MTBF 2,000,000 hours vs 1,500,000 hours Around 35% higher MTBF

Features Key features of the 840 EVO  vs DC S3500 

random read

840 EVO
98,000 IOPS
DC S3500
75,000 IOPS

random write

840 EVO
90,000 IOPS
DC S3500
11,500 IOPS

sequential read

840 EVO
540 MB/s
DC S3500
500 MB/s

sequential write

840 EVO
520 MB/s
DC S3500
450 MB/s

Specifications Full list of technical specs

storage

840 EVO  vs
DC S3500 
Capacity 1,000 GB 800 GB
Cache 1,000 MB 1,024 MB
Interface SATA III SATA III
Interface speed 6 Gbit/s 6 Gbit/s
Controller Samsung MEX Intel PC29AS21BA0
Memory type TLC MLC
NAND process size 19 nm 20 nm
Maximum shock force 1,500G 1,000G

form factor

840 EVO  vs
DC S3500 
Form factor 2.5" 2.5"
Mfg warranty 3 years 5 years
Thickness 7 mm 8 mm
Weight 53 g 72 g

manufacturer performance

Sequential read 540 MB/s 500 MB/s
Sequential write 520 MB/s 450 MB/s
Random read 98,000 IOPS 75,000 IOPS
Random write 90,000 IOPS 11,500 IOPS
Power consumption (Idle) 0.04 Watts 0.65 Watts
Power consumption (Active) 0.1 Watts 5 Watts
MTBF 1,500,000 hours 2,000,000 hours

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